Advanced logic and memory manufacturing processes are becoming more reliant on fast turnaround of precise structural and analytical data to be able to quickly calibrate tool sets, diagnose yield excursions, and optimize process yields. At technology nodes below 28nm, especially in cases where 3D and advanced device designs are being implemented, conventional SEM or optical-based analysis and inspection tools run into challenges that limit their ability to provide robust and reliable data. The Thermo Scientific Metrios AX transmission electron microscope (TEM) is the first TEM dedicated to providing the fast, precise characterization and reference metrology that semiconductor manufacturers need to develop and control their wafer fabrication processes in order to accelerate profitable yield.

High-volume TEM data, accurate and repeatable

The Metrios AX TEM automates the basic TEM operation and measurement procedures, minimizing the requirements for specialized operator training. Its advanced automated metrology routines deliver significantly greater precision than manual methods. The Metrios AX TEM is designed to provide improved throughput and lower cost-per-sample than other TEMs.


Key Features

Consistent, repeatable, precise

Designed from the ground-up to deliver repeatable TEM and STEM-based imaging, analytics and gauge capable metrology.

Metrology accuracy

Less than 0.75% combined error in distortion and magnification calibration for both TEM and STEM.

Automated EDS and hybrid metrology

Acquire and quantify EDS data with automation. Use elemental contrast on key critical dimensions to extend STEM.

Workflow connectivity

Critical process data is tracked through sample prep, plucking, and imaging. Metrology can be applied offline to maximize tool acquisition time. All imaging and metrology data is consolidated in a web-based image viewer.


Specifications

High Tension Range (kV)

60-200 kV

Information Limit 200 kV (nm)

0.11

 

Non-corrected

Probe corrected*

STEM HAADF Resolution (nm) 200 kV

  • ≤0.164
  • ≤0.083

STEM HAADF Resolution (nm) 80 kV

  • ≤0.31
  • ≤0.11

Metrology precision on MetroCal wafer for horizontal and vertical 

  • ≤0.3 nm 3σ
 

Electron source

  • X-CFEG or XFEG
 

Ultra-stable electronics and high tension

  • Included
 

Acoustic enclosure

  • Included
 

Constant power lenses

  • Included
 

Piezo stage

  • Included
 

Probe corrector compatible

  • Yes
 
*For manual use. Specifications are subject to change. 

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